Toward atom probe tomography of microelectronic devices
نویسندگان
چکیده
منابع مشابه
Three dimensional investigation for the 22-nm-node and beyond: surface morphology of gate-all-around transistors
Gate-all-around (GAA) Si nanowire transistors are promising candidates for future CMOS devices [1]. They present a low off-state leakage current and offer high performance for sub-22 nm technologies [2]. The fabrication of such devices involves the conformal deposition of the gate stack directly around etched semiconductor Si nanowires. It is known that electrical properties of these devices ar...
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The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...
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P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superlattice was studied using SIMS. Although the AlGaN and GaN were nominally doped to the same level, ...
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We propose a scheme for localizing an atom in a four-level configuration inside a classical standing wave field, conditioned upon the measurement of frequency of a weak probe field. In the classical standing wave field, the interaction between the atom and the field is position dependent due to the Rabi-frequency of the driving field. Hence, as the absorption frequency of the probe field is mea...
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Atom-probe tomography (APT) is a quantitative technique that permits three-dimensional (3-D) spectroscopic characterization of interfaces and other nanometer-scale features within a material. Specimens for atom-probe tomography (APT) analysis of semiconductor devices and nanostructured materials are typically fabricated employing a focused ion beam (FIB) instrument [1 3] or a dual-beam FIB inst...
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